35EB Blue

Product Category:GaN LED Chip

Appearance Parameter

  • Chip Size:22mil x 35mil (530±20µm x 885±20µm)
  • Chip thickness:120±10µm
  • P Electrode:80±5µm
  • N Electrode:80±5µm

Material

  • P Electrode:Gold
  • N Electrode:Gold
  • Substrate:Sappfire

Modify the date:2018-11-21

Electro-optical Characteristics at Ta=25℃

Name Symbol Unit Min Type Max Test Condition
Forward Voltage Vf V 2.9 / 3.4 IF=120mA
Reverse Voltage IR µA 0 / 1 VR=-7V
Main Wavelengh WLD nm 442.5 / 470 IF=120mA
Light Intensity Po mW 150 / 250 IF=120mA

 

Absolute Max Ragteings at Ta=25℃

Name Symbol Condition Rating Test Condition
Forward DC If Ta=25°C ≤150 mA
Reverse Voltage Vr Ta=25°C ≤9 V
Junction Temp. Tj / ≤125
Storage Temp. Tstg Chip -40~+85
Storage 0~+40
Shipping -20~+65
Package Temp. / / 280(<10s)

 

Company Information


Semiconductor industry has been growing steadily and significantly. Therefore, Central Material Co., Ltd. was established

in 2014 in Taoyuan, Taiwan. In order to satisfy diversified demand for professional electronic materials and provide perfect

technical multi-supports, we are actively exploring overseasmarkets, and developing trade mark for all kinds of needs and

products. Moreover, Central Material is the exclusive agent of many well-known international manufacturers in Taiwan.

To provide safe and stable products and support semiconductor solutions with our best service platform in Asia, we continue

innovating and providing great supports to be the best partnership with our clients.